GB/T 35310-2017
Active200mm silicon epitaxial wafer
200mm硅外延片
Application Summary AI generated
GB/T 35310-2017 specifies the technical requirements, test methods, inspection rules, and packaging for 200mm diameter silicon epitaxial wafers used in semiconductor manufacturing. It applies to the production and quality control of epitaxial wafers for integrated circuits and discrete devices, ensuring consistent electrical properties and surface quality. This standard is primarily used by wafer suppliers and fabs to guarantee compatibility with photolithography and device fabrication processes.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.